中国机械工程 ›› 2022, Vol. 33 ›› Issue (15): 1803-1809.DOI: 10.3969/j.issn.1004-132X.2022.15.006

• 机械基础工程 • 上一篇    下一篇

光纤法珀式SiC耐高温压力传感器的制造与测试

盛天宇;李健;李鸿昌;蒋永刚   

  1. 北京航空航天大学仿生与微纳系统研究所,北京,100191
  • 出版日期:2022-08-10 发布日期:2022-08-25
  • 通讯作者: 蒋永刚(通信作者),男,1982年生,教授、博士研究生导师。研究方向为仿生感知和微机电系统技术。E-mail:jiangyg@buaa.edu.cn。
  • 作者简介:盛天宇,男,1995年生,博士研究生。研究方向为耐高温压力传感器、柔性电子。E-mail:shengty@buaa.edu.cn。
  • 基金资助:
    国家自然科学基金(52022008)

Fabrication and Measurement of SiC Fiber-optic Fabry-Perot Pressure Sensors for High-temperature Applications

SHENG Tianyu;LI Jian;LI Hongchang;JIANG Yonggang   

  1. Institute of Bionic and Micro-nano Systems,Beihang University,Beijing,100191
  • Online:2022-08-10 Published:2022-08-25

摘要: 针对高温环境下压力参数的原位测试需求,基于碳化硅(SiC)材料优异的耐高温特性,研制了一种光纤法珀式全SiC结构耐高温压力传感器。采用超声振动铣磨的加工方法制备了表面粗糙度Ra约11.9 nm的SiC传感膜片。利用SiC晶片氢氟酸辅助直接键合技术,实现SiC传感膜片与SiC基板的高强度气密性键合。搭建了高温压力测试系统,对制备的SiC耐高温压力传感器样机进行了高温环境下的性能测试。结果表明,该传感器能够实现600 ℃高温环境下 0~4 MPa范围内的压力测量;600 ℃下传感器的压力灵敏度达到104.42 nm/MPa,具有较高的线性度,R2>0.99。

关键词: 压力传感器, 碳化硅, 法珀干涉, 超声加工, 直接键合

Abstract: In order to meet the urgent needs of in-situ pressure detections at high temperatures, a fiber Fabry-Perot SiC high-temperature pressure sensor was fabricated based on the excellent high temperature resistance of SiC materials. A SiC sensor diaphragm with surface roughness Ra about 11.9 nm was fabricated via an ultrasonic vibration mill-grinding(UVMG) method. A direct bonding using SiC wafer hydrofluoric acid was used to realize the high strength air tightness bonding between SiC sensing diaphragm and SiC substrate. The prepared SiC high temperature resistant pressure sensor prototype was tested in high temperature conditions after a high temperature pressure test system was built. Results demonstrate the sensing capabilities for pressures from 0 to 4 MPa at 600 ℃. The pressure sensor illustrates a good linearity(R2>0.99). The pressure sensitivity is measured to be as 104.42 nm/MPa at 600 ℃. 

Key words: pressure sensor, silicon carbide(SiC), Fabry-Perot interferometer, ultrasonic machining, direct bonding

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