关键词: 激光辅助水射流, 微槽, 砷化镓晶片, 工艺参数

Abstract: Comparative experiments of dry laser， low-pressure waterjet assisted laser and laser assisted waterjet processing microgrooves of GaAs wafers were conducted. The results show that laser assisted waterjet processing is suitable for processing GaAs materials, which may process high quality microgrooves without contamination on the wafer surfaces， large depth， small heat affected zone width and large depth to width ratio. And the micromorphologies of the machined surfaces are uniform with few microcracks， which are better than the other two methods. The cutting performance of laser assisted waterjet microgrooving of GaAs wafers was studied experimentally. The results show that the processing factors（laser pulse energy， waterjet pressure， processing speed， waterjet inclination angle， focal plane position， and processing times）have significant influences on microgroove depth， microgroove width and material removal rate. The microgroove depth， microgroove width and material removal rate increase with increasing laser pulse energy， decrease with increasing waterjet pressure， and the material removal rate increases significantly with increasing processing speed. 

Key words:  , laser assisted waterjet, microgroove, gallium arsenide(GaAs) wafer, processing parameter