砷化镓解理加工的划片过程仿真分析及工艺研究

doi:10.3969/j.issn.1004-132X.2024.12.013

摘要/Abstract

摘要： 为有效提高砷化镓（GaAs）基半导体激光芯片巴条谐振腔面解理加工质量，开展了一种新型点划方式的划片仿真分析及工艺实验。建立GaAs划片过程的有限元仿真模型，根据不同划片工艺，研究划片载荷及应力分布情况；开展解理工艺验证实验，分析解理面形貌特征，对划片工艺进行验证。研究结果表明，优化后的工艺方法（即由内向外点划片）可有效降低划片过程材料表面损伤程度，减少脆性断裂现象，实验结果与仿真结果具有较高的一致性。

关键词: 半导体激光器, 谐振腔面, 砷化镓解理加工, 有限元分析

Abstract: In order to effectively improve the quality of GaAs-based semiconductor laser cavity mirrors, a new type of scribing method was proposed and carried out in simulation analysis and processing experiments. A finite element simulation model of the scribing processes of GaAs materials was established to optimize the existing processing methods and to investigate the distribution of scribing loads and stresses under different processes. A cleavage processing validation experiment was carried out to analyze the morphological characteristics of the cleavage surfaces. It is found that the optimized processing method, which involves scribing from the inside out, can effectively reduce the degree of material surface damages in the scribing processes and reduce the brittle fracture phenomenon. The experimental results were in high consistency with the simulation ones.

Key words: , semiconductor laser, resonant cavity surface, GaAs cleavage processing, finite element analysis

中图分类号:

TN248.4

张庆正1, 姜晨1, 高睿2, 蒋金鑫1. 砷化镓解理加工的划片过程仿真分析及工艺研究[J]. 中国机械工程, 2024, 35(12): 2203-2210.

ZHANG Qingzheng1, JIANG Chen1, GAO Rui2, JIANG Jinxin1. Simulation Analysis and Process Study of Scribing Processes for GaAs Cleavage Processing[J]. China Mechanical Engineering, 2024, 35(12): 2203-2210.

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链接本文: http://www.cmemo.org.cn/CN/10.3969/j.issn.1004-132X.2024.12.013

http://www.cmemo.org.cn/CN/Y2024/V35/I12/2203

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