[1]翁寿松[1].铜互连及其相关工艺[J].微纳电子技术,2004,41(3):14-16.
[2]朱永伟[1],王军[1],李军[1],林魁[1].固结磨料抛光垫抛光硅片的探索研究[J].中国机械工程,2009,10(6):723-727.
[3]Zuo Dunwen, Sun Yuli,Zhao Yufei,et al. Basic Research on Polishing with Ice Bonded Nanoabrasive Pad[J]. Journal of Vacuum Science &Technology B. ,2009,27(3) :1514-1519.
[4]苏建修.IC制造中硅片化学机械抛光材料去除机理研究[D].大连理工大学,2006:
[5]Wang D, Lee J, Holland K,et al. Von Mises Stress in Chemical- mechanical Polishing Processes[J]. The Electrochemical Society, 1997,3 : 1121-1127.
[6]Srinivasa-Murthya C,Wang D. Stress Distribution in Chemical Mechanical Polishing [J]. Thin Solid Films,2004, 308/309:533-537.
[7]Lin Y Y, Chen Ding Yeng, Ma Chuang. Simulations of a Stress and Contact Model in a Chemical Mechanical Polishing Process [J]. Materials Processing Technology, 2003, 140:646-652.
[8]Guo Yue Bin. A Finite Element Model for Wafer Material Removal Rate and Non Uniformity in Che mieal Meehanieal Polishing Process [J]. Journal of Heze Teachers College, 2001,23 (4) : 5-12.
[9]黄杏利.化学机械抛光保持环工艺参数及磨损模型的研究 [D].西北工业大学,2007:
[10]吕玉山[1],王军[1],张辽远[1],冯连东[1].护环对硅片抛光表面压强分布和轮廓的影响[J].光学精密工程,2008,16(4):689-695. |