Research on Dry Etching Processes on PSSs

doi:10.3969/j.issn.1004-132X.2021.24.014

Abstract

Abstract: In order to shorten the etching time and improve the luminescence performance of the light-emitting diodes(LEDs), the dry etching processes of adding etching auxiliary gas trifluoromethane(CHF3) were studied. The effects of the bias power, the CHF3 flows and the degree of throttle butterfly pendulum auto pressure control valve（abb. APC） on the etch selectivity and the etch rate were investigated by orthogonal experiments during the inductively coupled plasma(ICP) dry etching processs. The experimental results show that the process has higher etch selectivity and etch rate when the bias power, the CHF3 flows and the APC is as 350 W, 15 sccm and 55%, respectively. The PSSs with large size, high pattern-sapphire ratio and small radian were obtained, compared with the conventional PSSs, the height and the pattern-sapphire ratio of optimized PSSs are improved by 5.6% and 4.6%, respectively.

Key words: , patterned sapphire substrate(PSS), trifluoromethane(CHF3), etch selectivity, orthogonal test

摘要： 为了缩短刻蚀时间以及提高发光二极管（LEDs）的发光性能，针对添加刻蚀辅助气体三氟甲烷（CHF3）的干法刻蚀工艺进行了研究。采用感应耦合等离子（ICP）干法刻蚀技术并通过正交试验研究了偏压功率、CHF3流量、自动压力控制蝶阀开合度（APC）对刻蚀速率和选择比的影响。试验结果表明：当偏压功率、CHF3流量和APC分别为350W、15 sccm和55%时，制程工艺有着更大的刻蚀选择比和蓝宝石刻蚀速率。使用最佳工艺参数制备出了大尺寸、高占空比、小弧度图形化蓝宝石衬底（PSS），与常规PSS相比，优化后的工艺参数制得的PSS高度增加了5.6%、占空比提高了4.6%。

关键词: 图形化蓝宝石衬底（PSS）, 三氟甲烷, 刻蚀选择比, 正交试验

CLC Number:

TN312.8

HOU Xiang, LIU Yixin, ZHONG Mengjie, LIN Sai, LIU Yang, LUO Ronghuang, LUO Xuetao, ZHANG Sa, . Research on Dry Etching Processes on PSSs[J]. China Mechanical Engineering, 2021, 32(24): 3001-3007.

侯想, 刘熠新, 钟梦洁, 林赛, 刘杨, 罗荣煌, 罗学涛, 张飒, . 图形化蓝宝石衬底干法刻蚀工艺研究[J]. 中国机械工程, 2021, 32(24): 3001-3007.

References

［1］CUI Lin, WANG Guigen, ZHANG Huayu, et al. Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes［J］. Journal of Inorganic Materials, 2012, 27(9):897-905.
［2］刘建哲，杨新鹏，彭艳亮，等. LED用图形化蓝宝石衬底的干法刻蚀工艺［J］. 微纳电子技术，2014，51(8)：536-541.
LIU Jianzhe, YANG Xinpeng, PENG Yanliang, et al. Dry Etching Process of the Patterned Sapphire Substrate for LED［J］. Micronanoelectronic Technology, 2014, 51(8):536-541.
［3］CHEN Yiyong, CHEN Zhuoling, JIANG Shengxiang, et al. Fabrication of Nano-patterned Sapphire Substrates by Combining Nanoimprint Lithography with Edge Effects［J］. Crystal Engineering Communication, 2019, 21(11):1794-1800.
［4］WANG Guigen, ZUO Hongbo, ZHANG Huayu, et al. Preparation, Quality Characterization, Service Performance Evaluation and Its Modification of Sapphire Crystal for Optical Window and Dome Application［J］. Materials & Design, 2010, 31(2):706-711.
［5］黄成强，夏洋，陈波，等. 图形化蓝宝石衬底工艺研究进展［J］. 半导体技术，2012，37(7)：497-503.
HUANG Chengqiang, XIA Yang, CHEN Bo, et al. Study Progress of the Manufacturing Process of Patterned Sapphire Substrates［J］. Semiconductor Technology, 2012,37(7):497-503
［6］马文静，杨瑞霞，陈春梅，等. 基于胶体球掩模板法制备图形化蓝宝石衬底［J］. 半导体技术，2018，43(5)： 353-358.
MA Wenjing, YANG Ruixia, CHEN Chunmei, et al. Preparation of the Nanopatterned Sapphire Substrate Based on the Colloidal Sphere Mask［J］. Semiconductor Technology, 2018, 43(5):353-358.
［7］王静辉，杨私私，李晓波，等. 图形化蓝宝石衬底形貌对GaN基LED出光性能的影响［J］. 半导体技术，2017，42(5)：347-351.
WANG Jinghui, YANG Sisi, LI Xiaobo, et al. Influences of Patterned Sapphire Substrate Morphology on the GaN-based LED Luminescence Properties［J］. Semiconductor Technology, 2017, 42(5):347-351.
［8］JEONG S M, KISSINGER S, RA Y H, et al. Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities［J］. Japanese Journal of Applied Physics, 2014, 49(4):1-6.
［9］敬小成，姚若河，吴纬国. 二氧化硅干法蚀刻参数的优化研究［J］. 半导体技术，2005，30(6)：37-40.
JING Xiaocheng, YAO Ruohe, WU Weiguo, Research on Optimizing Etching Parameters of the Dry Etching for Silicon Dioxide［J］. Semiconductor Technology, 2005, 30(6):37-40.
［10］佟玉莹，杨国锋，赵建利，等. 图形化蓝宝石衬底结构对GaN基LED发光性能的影响［J］. 光电子：激光，2015，26(5)：829-834.
TONG Yuying, YANG Guofeng, ZHAO Jianli, et al. Effects of Patterned Sapphire Substrate Morphology on the Emission Properties of GaN-based LEDs［J］. Journal of Optoelectronics·Laser, 2015, 26(5):829-834.
［11］丁星火. 高出光效率LED芯片制造技术研究［D］.武汉：武汉大学，2019.
DING Xinghuo. Study on Manufacturing Technology of Highly Efficient Light-emitting Diodes［D］. Wuhan:Wuhan University, 2019.
［12］LEE J H, LEE D Y, OH B W, et al. Comparison of InGaN-based LEDs Grown on Conventional Sapphire and Cone-shape-patterned Sapphire Substrate［J］. IEEE Transactions on Electron Devices, 2009, 57(1):157-163.
［13］付星星，刘扬，张国义. PSS侧壁弧度优化及对GaN基LED出光效率的影响［J］. 微纳电子技术，2016，53(5)：321-325.
FU Xingxing, LIU Yang, ZHANG Guoyi. Radian Optimization of the Side-wall of the PSS Pattern and Its Influence on the Light Extraction Efficiency of GaN-based LEDs［J］. Micronanoelectronic Technology, 2016, 53(5):321-325.
［14］李攀，卢宏. 氮化镓的干法刻蚀工艺研究［J］. 实验室研究与探索，2020，39(6)：19-21.
LI Pan, LU Hong. Study on Dry Etching Technology of GaN［J］. Research and Exploration in Laboratory, 2020, 39(6):19-21.
［15］李碧媛，张永宏，魏育才，等. 电感耦合等离子体刻蚀对InGaP/GaAs台面形貌的影响［J］. 半导体技术，2020，45(3)：219-223.
LI Biyuan, CHANG Yunghung, WEI Yucai, et al. Influences of Inductively-coupled Plasma Etching on Morphology of InGaP/GaAs Mesa［J］. Semiconductor Technology, 2020, 45(3):219-223.
［16］孙丽媛，高志远，张露，等. GaAs材料ICP刻蚀中光刻胶厚度及刻蚀条件对侧壁倾斜度的影响［J］. 功能材料与器件学报，2012，18(4)：283-290.
SUN Liyuan, GAO Zhiyuan, ZHANG Lu, The Influence of Photopersist Thickness and Etching Condition on the Slope Angle during the ICP Etching Process of GaAs［J］. Journal of Functional Materials and Devices, 2012, 18(4):283-290.
［17］吴雅仙. 高抗刻蚀选择比光刻胶的研究进展［J］. 探索科学，2016 (3)：81-84.
WU Yaxian. Research Progress of Photoresist with High Etching Resistance and Selective［J］. Explore Science, 2016 (3):81-84.
［18］张海洋. 等离子体刻蚀及其在大规模集成电路制造中的应用［M］. 北京：清华大学出版社，2018.
ZHANG Haiyang. Plasma Etching and Its Application in Large Scale Intergrated Circuit Manufacturing［M］. Beijing:Tsinghua Press, 2018.
［19］PAN J W, TSAI P J, CHANG K D, et al. Light Extraction Efficiency Analysis of GaN-based Light-emitting Diodes with Nanopatterned Sapphire Substrates ［J］. Applied Optics, 2013, 52(7):1358-1367.
［20］于晓杰，李康，孔凡敏，等. 周期性椭球结构薄膜倒装LED光提取效率的研究［J］. 系统仿真学报，2016，28(2)：369-375.
YU Xiaojie, LI Kang, KONG Fanmin, et al. Study of Light Extraction Efficiency for Thin-film-flip-chip Light-emitting Diodes with Periodic Spheroids［J］. Journal of System Simulation, 2016,28(2):369-375.

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